| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein crystal length grown by the influence of substrate heat storage is different for each irradiation shot in a process for repeating crystallization in the irradiation of two kinds of laser beams by an SLS method. SOLUTION: The manufacturing method of a semiconductor device including a process for crystallizing a semiconductor film formed on an insulator substrate with laser beams for crystallization comprises a process for applying first laser beams having a wavelength adsorbed by the insulator substrate or a fused semiconductor film, a process for fusing the semiconductor film by the irradiation of second laser beams having the wavelength adsorbed by the semiconductor film before crystal growth, and a process for expanding a crystallized region by relatively scanning the semiconductor film with laser beams repeatedly. In this case, the substrate scan speed is changed for each irradiation of second laser beams. COPYRIGHT: (C)2006,JPO&NCIPI
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