| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method which can uniformly harden an entire film having a low dielectric constant upon hardening of the low-k film. SOLUTION: In the plasma processing method, a first gas having a plasma stabilizing action and a second gas for generating active hydrogen are introduced into the processing chamber of a plasma processing apparatus, then a plasma is generated against a film having a low dielectric constant formed on a substrate to be inspected within the processing chamber, so that the low-dielectric-constant film is hardened. Plasma ignition in the hardening treatment is carried out after the H<SB>2</SB>gas introduction. As a result, the low-dielectric-constant film can be uniformly hardened while keeping a good film quality. COPYRIGHT: (C)2006,JPO&NCIPI
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