发明名称 PLASMA REACTION CHAMBER AND SUBSTRATE TREATMENT SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a plasma reaction chamber for integrating at least two vacuum chambers in a multiple arrangement to treat at least two substrates in parallel. SOLUTION: A plasma reaction chamber comprises two vacuum chambers 30, 32, a chamber housing 10 having two inner connection passages 16, 18 for connecting two vacuum chambers to each other, at least one magnetic cores 40, 42 installed inside the chamber housing to transfer the induced electromotive force by a discharge path 47 formed through the two vacuum chambers and two inner connection passages, and winding coils 41, 43 having magnetic cores connected to a power supply to supply the electromotive force to excite plasma to the discharge path, and includes a gas input port 20 and a gas output port 25 which are installed in the chamber housing to input/output gas in/from the vacuum chambers. The productivity per unit area can be enhanced by such configuration. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006131985(A) 申请公布日期 2006.05.25
申请号 JP20040334199 申请日期 2004.11.18
申请人 NEW POWER PLASMA CO LTD 发明人 CHOI DAE-KYU
分类号 C23C16/455;C23C16/44 主分类号 C23C16/455
代理机构 代理人
主权项
地址
您可能感兴趣的专利