| 摘要 |
PROBLEM TO BE SOLVED: To easily adjust the temperature of a film thickness measuring element to the wafer temperature, and to easily change the film thickness measuring element, when measuring the film thickness of a film deposited on a wafer by the film thickness measuring element. SOLUTION: A wafer W and a film thickness measuring element 1(11) are installed on a susceptor 9, a film is deposited on the wafer and the film thickness measuring element 1(11), and the film thickness of the film deposited on the film thickness measuring element is measured. Preferably, the film thickness measuring element comprises a leg part, a vibration part, an electrode to excite the basic vibration on the vibration part, and an element terminal part to electrically connect the electrode to the outside. COPYRIGHT: (C)2006,JPO&NCIPI
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