Bottom layer resist polymers for photolithography and methods of manufacturing the same

摘要

In one aspect, a bottom layer resist polymer has an expanded p-electron conjugation system based on a monomer unit having a 3,3'-diindenyl structure. The bottom layer resist polymer of this aspect is composed of a repeat unit having the 3,3'-diindenyl structure represented by the following formula: where l, m and n are respective mole fractions of monomer units of the polymer, where l+m+n=1, where l=0.1 to 0.9, m=0.1 to 0.9, and n=0 to 0.8, where each of k₁ and k₂ is independently 0 or 1, and each of R₁, R₂, R₃ and R₄ is independently a hydrogen atom or an unsaturated hydrocarbon, and where Z is a monomer unit including a bisphenol derivative.