PLANARIZATION MATERIAL, ANTI-REFLECTION COATING FORMATION MATERIAL, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THEM

摘要

PROBLEM TO BE SOLVED: To remove a reaction inhibition substance that causes bad resolution of a resist pattern in forming a dual damascene structure.

SOLUTION: A material containing an optical acid generation agent or a thermal acid generation agent in at least one of a planarization material planarizing a formation face of a chemical amplification resist film in which an exposure part is soluble (insoluble) in a developing liquid by reaction with an acid substance generated together with exposure or antireflection coating formation material applied just under the chemical amplification resist film is used. When the material contains the optical acid generation agent, the whole face exposure is performed before forming the chemical amplification resist film. In addition, when the material contains the thermal acid generation agent, an acid substance is generated by heating before exposure of the chemical amplification resist film. Thereby a basic substance caused by nitrogen existing in a second insulating film 4 or the like comprising a low dielectric constant film of a carbon containing silicon oxide film or the like of a low layer is removed with the acid substance of the material and prevented from scattering in the chemical amplification resist film.

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