| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a diffusion preventing layer properly on the surface part of semiconductor substrate each corresponding to at least the edge of the CB side of a gate electrode part in a DRAM having the CB of a SAC structure provided between two gate electrode parts. <P>SOLUTION: For example, after a contact hole 25a for forming the CB is formed between gate electrode parts 17, 17 by lithography process and etching, a second interlayer film 35 is removed by pullback. Then, a p-type conductive diffusion preventing layer 31 for preventing the diffusion of a diffusion layer 23a is configured to be formed by CB Halo Ion Implantation process using the second interlayer film 35 as a mask while a first side wall insulation film exposed within the contact hole 25a is separated. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
