| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which is employed in manufacturing steps of semiconductors such as ICs and when manufacturing liquid crystals, circuit boards for thermal heads, and used in the lithographic steps of other photo applications, and which improves developing defect rates in normal exposure and suppresses degradation of the DOF (depth of focus) and the profile when applied to liquid immersed exposure, with improved hydrophilicity and gnerating less scum, and also provide a pattern forming method using this composition. <P>SOLUTION: This is a positive resist composition containing (A) resin which has a monocyclic or multicyclic cycloparaffin structure and is decomposed by acid and becomes easier to dissolve in an alkali developer, (B) a compound which generates acid when irradiated with active light or radiation, and (F) special surfactant. This pattern forming method employs this positive resist composition. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
