发明名称 |
Method of forming ultra thin silicon oxynitride for gate dielectric applications |
摘要 |
A method of forming a gate dielectric layer is disclosed. The method comprises the following steps. A substrate is provided having silicon regions containing surfaces upon which gate dielectrics are to be disposed. An oxide is formed over the surfaces. A silicon layer is formed over the oxide layer. A nitridation process is performed. An optional high temperature annealing step may be performed.
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申请公布号 |
US2006110865(A1) |
申请公布日期 |
2006.05.25 |
申请号 |
US20040992894 |
申请日期 |
2004.11.19 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
LIU JINPING;KOH HWA W.;SOHN DONG K.;HSIA LIANG C. |
分类号 |
H01L21/84;H01L21/31 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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