| 摘要 |
Form a gate electrode on a transistor region of a first conductivity type semiconductor substrate including a photodiode region and the transistor region. Form lightly-doped second conductivity type diffusion areas at both sides of the gate electrode in the photodiode region and the transistor region. Form a screen layer over an entire surface of the semiconductor substrate including the gate electrode. Form a highly-doped second conductivity type diffusion area by planting second conductivity type impurity ions with high density to the entire surface of the semiconductor substrate using the photoresist pattern as a mask, and remove the photoresist pattern and the oxide layer.
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