发明名称 Semiconductor storage device and mobile electronic device
摘要 When an input voltage determining circuit 24 determines that an input voltage exceeds a prescribed voltage, a control circuit 25 of a positive polarity power selector circuit 22 turns on a first switch SW 1 and turns off second and third switches SW 2 and SW 3 , thereby supplying the input voltage to a memory cell array 21 via the first switch SW 1 . When the input voltage determining circuit 24 determines that the input voltage is not higher than the prescribed voltage, the control circuit 25 turns off the first switch SW 1 and turns on the second and third switches SW 2 and SW 3 , thereby supplying a voltage from a charge pump 23 via the second and third switches SW 2 and SW 3 . By this operation, the memory element is able to retain storage of two bits or more even if miniaturized, to execute stable operation with a small circuit area and to prevent circuit malfunction attributed to a small current supplied to the memory cell array.
申请公布号 US2006109729(A1) 申请公布日期 2006.05.25
申请号 US20030528997 申请日期 2003.09.10
申请人 SHARP KABUSHIKI KAISHA 发明人 YAOI YOSHIFUMI;IWATA HIROSHI;SHIBATA AKIHIDE;NAWAKI MASARU;TOKUI KEI
分类号 G11C5/14;G11C16/06;G11C16/02;H01L21/28;H01L21/336;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C5/14
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