| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element excellent in mass productivity at low fabrication cost. <P>SOLUTION: In the semiconductor light emitting element having a metal oxide film 9 as a current dispersion layer, an electrode 10 is plated on the metal oxide film 9. Since the electrode is formed by plating, fabrication cost can be reduced. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
