| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method which can manufacture a magnetoresistance effect element having a high MR rate of change without increasing an area resistance RA largely. <P>SOLUTION: The magnetic resistance effect element includes a fixed magnetization layer whose magnetization direction is substantially fixed to one direction, a free magnetization layer whose magnetization direction changes according to an external field, and a spacer layer which contains an insulating layer located between the fixed magnetization layer and the free magnetization layer and a current path passing through the insulating layer. The fixed magnetization layer or the free magnetization layer positioned on the underside of the spacer layer contains crystal grains separated by a grain boundary extending in the direction of thickness. When the in-plane direction position of one end of the crystal grain is 0, and the in-plane direction position of the grain boundary adjacent to another end of the crystal grain is 100; the current path is formed on an area where the in-plane direction position is 20 to 80. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
