| 摘要 |
PROBLEM TO BE SOLVED: To reduce a switching magnetic field and to improve write disturbance. SOLUTION: With regard to data write into a first magnetoresistive element C arranged at an intersection of a first write line WWLi and a second write line WBLj that intersect with each other, the switching mechanism of the state of magnetization relating to an embodiment of the present invention operates to reverse the magnetization of a first magnetoresistive element C by applying a first write current IWL to the first write line WWLi and applying a second write current IBL to the second write line WBLj and, in addition, causes, during the data wite, the magnetization patterns of second magnetoresistive elements B1, B2 to have different states from the state of the magnetization pattern of the first magnetoresistive element C. The second magnetoresistive elements B1, B2 are each applied only with the magnetic field generated by one of the first and second write currents IWL and IBL. COPYRIGHT: (C)2006,JPO&NCIPI
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