发明名称 MEMORY UNIT WHICH CAN RAISE EFFICIENCY OF DATA STROBE BUS LINE, MEMORY SYSTEM PROVIDED WITH IT, AND CONTROL METHOD OF DATA STROBE SIGNAL
摘要 PROBLEM TO BE SOLVED: To provide a memory unit which can raise efficiency of bus line transmitting both-direction data strobe signal using CTT and has a low power consumption, a memory system provided with it, and a control method of data strobe signal. SOLUTION: The memory system of this invention is a memory system in which data strobe signal is not driven to a high impedance Hi-Z state even when the data strobe output driver in a memory unit is in active standby section, and the signal is driven in valid logical level until state in which data strobe signal must be driven to the high impedance Hi-Z state occurs, to prevent that data strobe bus line becomes the half of power source voltage in standby interval. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006134334(A) 申请公布日期 2006.05.25
申请号 JP20050321358 申请日期 2005.11.04
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE DONG-YANG
分类号 G06F12/00;G11C11/401;G11C11/407 主分类号 G06F12/00
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