| 摘要 |
The invention proposes a bipolar transistor comprising a substrate, emitter, base, and collector layers and, if appropriate, contact layers. The base layer is formed from a GaAsSb material. The transistor also has at least one transition layer formed from a GaInP material between the emitter layer and the base layer. The presence and composition of the transition layer allows the profile of the conduction band of the transistor to be shaped to optimize performance. Further, the composition of the transition layer facilitates fabrication of the transistor by selective etching. The invention also relates to a circuit comprising a bipolar transistor of the invention. The invention also proposes a method of fabricating a transistor in accordance with the invention.
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