发明名称 VACUUM DEPOSITION SYSTEM, FILTER AND SEMICONDUCTOR LIGHT EMITTING DEVICE PRODUCED USING THEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a vacuum deposition system where, as a window layer for a semiconductor light emitting device, a current dispersion layer composed of a transparent electrically conductive film of metal oxide is formed, and simultaneously, its roughening is possible, to provide a filter utilized for the vacuum deposition system, and to provide a semiconductor light emitting device produced by using them. <P>SOLUTION: Regarding the constitution of the vacuum deposition system, the inside of a vacuum vessel 15 is placed with an evaporation source 14 of metal oxide and the substrates 11 to be deposited in which each face to be deposited is slantly fronted to the evaporation source in the upper part of the evaporation source, the space between the evaporation source 14 and the substrates 11 to be deposited is provided with a mechanically composed filter having many vacancies with fine diameters, and a vapor flow is passed therethrough, thus a roughened transparent electrically conductive film composed of metal oxide is formed on the face to be deposited in the substrate 11 to be deposited. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006131948(A) 申请公布日期 2006.05.25
申请号 JP20040321784 申请日期 2004.11.05
申请人 HITACHI CABLE LTD 发明人 ARAI MASAHIRO;KONNO TAIICHIRO
分类号 C23C14/08;H01B13/00;H01L33/14;H01L33/22;H01L33/30;H01L33/42 主分类号 C23C14/08
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