| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory apparatus in which rewriting frequency of data for a nonvolatile memory can be increased without using an alternative memory. <P>SOLUTION: This apparatus is provided with a nonvolatile memory 2 having a plurality of sectors 21 to 2n and performing electrically rewriting with a sectors 21 to 2n unit, a head address storing means 32 storing a head address for accessing the nonvolatile memory 2 for each sector, the rewriting frequency storing means 31 storing the rewriting frequency of data for each sector, and a control means 1. The control means 1 replaces stored data of the sector and the head address stored by the head address storing means 32 with a sector unit. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
