| 发明名称 |
Electrically programmable memory element with improved contacts |
| 摘要 |
A method of making an electrically programmable memory element, comprising: providing a conductive sidewall spacer; and forming a phase-change material in electrical communication with said conductive sidewall spacer.
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| 申请公布号 |
US2006110846(A1) |
申请公布日期 |
2006.05.25 |
| 申请号 |
US20050287833 |
申请日期 |
2005.11.28 |
| 申请人 |
LOWREY TYLER;OVSHINSKY STANFORD R;WICKER GUY C;KLERSY PATRICK J;PASHMAKOV BOIL;CZUBATYJ WOLODYMYR;KOSTYLEV SERGEY A |
发明人 |
LOWREY TYLER;OVSHINSKY STANFORD R.;WICKER GUY C.;KLERSY PATRICK J.;PASHMAKOV BOIL;CZUBATYJ WOLODYMYR;KOSTYLEV SERGEY A. |
| 分类号 |
H01L21/00;G11C11/56;H01L27/24;H01L45/00 |
主分类号 |
H01L21/00 |
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