| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element which prevents the generation of a crack and can manufacture with good yield without variation in various characteristics with uniform thickness of nitride semiconductor thin film and with even profile of a growth surface. SOLUTION: Spread and movement by migration is inhibited in atom and molecule used as materials of the nitride semiconductor thin film or molecule, or an intent target is promoted by growing up the nitride semiconductor thin film on the substrate having an off-angle between the normal direction and the crystal orientation <0001>. As a result, the surface flatness forms a good nitride semiconductor growth layer, and the nitride semiconductor device with various good properties can be obtained. COPYRIGHT: (C)2006,JPO&NCIPI
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