| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device whose circuit size is small and capable of reading data at a high speed. SOLUTION: This device is provided with first and second memory cells for storing predetermined data, a first bit line connected to the first memory cell, a second bit line connected to the second memory cell, first and second data lines having predetermined capacities, first and second charge transfer parts for transferring charges discharged to the first and second bit lines to the first and second data lines when the charges stored in the first and second memory cells are discharged to the first and second bit lines, a transfer control unit for controlling the first and second charge transfer parts based on the voltage of the 1st bit line, and a determination part for determining data stored in the second memory cell based on the voltage of the second data line having charges transferred thereto from the second bit line. COPYRIGHT: (C)2006,JPO&NCIPI
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