发明名称 |
Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the same |
摘要 |
A multi-bit non-volatile memory device and methods of operating and fabricating the same may be provided. The memory device may include a channel region formed in a semiconductor substrate, and a source and drain that form a Schottky contact with the channel region. Also, a central gate electrode may be located on a portion of the channel region, and first and second sidewall gate electrodes may be formed on the channel region along the outer sides of the central gate electrode. First and second storage nodes may be formed between the channel region and the sidewall gate electrodes.
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申请公布号 |
US2006108629(A1) |
申请公布日期 |
2006.05.25 |
申请号 |
US20050220619 |
申请日期 |
2005.09.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHAE SOO-DOO;KIM MOON-KYUNG;LEE JO-WON;KIM CHUNG-WOO |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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