| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase epitaxial growth device which has a simple structure of sufficient assemblability and can form a film of good quality on a substrate to be processed, and to provide a vapor phase epitaxial growth method. SOLUTION: The device is provided with an upstream reaction tube introducing material gas; and a center reaction tube which makes material gas introduced from the upstream reaction tube react with the substrate held toward an inner part, and which ejects reacted materials gas. The upstream reaction tube is provided with a pair of plate members 21 and 22, and a side wall object 23 made of fluororesin sandwiched between the plate members 21 and 22. A gap is not formed between the side wall object 23 and the plate members 21 and 22 even if a different member is not used by appropriate elasticity of fluororesin. COPYRIGHT: (C)2006,JPO&NCIPI
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