发明名称 |
CMOS image sensor |
摘要 |
A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.
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申请公布号 |
US2006108614(A1) |
申请公布日期 |
2006.05.25 |
申请号 |
US20050284883 |
申请日期 |
2005.11.23 |
申请人 |
YI DUK-MIN;KIM JONG-CHAE;PARK JIN-HYEONG |
发明人 |
YI DUK-MIN;KIM JONG-CHAE;PARK JIN-HYEONG |
分类号 |
H01L29/768;H04N5/369;H04N5/374 |
主分类号 |
H01L29/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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