发明名称 Field effect transistor and its manufacturing method
摘要 To provide a method of easily producing TFT in which the orientation of channel molecules or wires is enhanced, compared with conventional type organic TFT at a low price, a lyophilic TFT pattern encircled by a lyophobic area is formed on a substrate, spontaneous movement is made in a droplet containing organic molecules or nanowires dropped in a channel region by characterizing the form of the pattern, and the organic molecules or the nanowires are oriented in the channel region by the movement.
申请公布号 US2006110847(A1) 申请公布日期 2006.05.25
申请号 US20050194597 申请日期 2005.08.02
申请人 FUJIMORI MASAAKI;HASHIZUME TOMIHIRO;ANDO MASAHIKO 发明人 FUJIMORI MASAAKI;HASHIZUME TOMIHIRO;ANDO MASAHIKO
分类号 H01L51/40;H01L21/00;H01L21/84 主分类号 H01L51/40
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