发明名称 |
Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated |
摘要 |
A method of programming a non-volatile memory device including a transition metal oxide layer includes applying a first electric pulse to the transition metal oxide layer for a first period to reduce a resistance of the transition metal oxide layer and applying a second electric pulse to the transition metal oxide layer for a second period, longer than the first period, to increase the resistance of the transition metal oxide layer. Related devices are also disclosed. |
申请公布号 |
US2006108625(A1) |
申请公布日期 |
2006.05.25 |
申请号 |
US20050282136 |
申请日期 |
2005.11.18 |
申请人 |
LEE MOON-SOOK;BAEK IN-GYU |
发明人 |
LEE MOON-SOOK;BAEK IN-GYU |
分类号 |
H01L27/108;G11C11/00;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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