| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor display plate and its manufacturing method wherein transmittance of a pixel can be secured even when H<SB>2</SB>washing is performed and even when a nitride film is vapor-deposited on a transparent electrode. SOLUTION: The thin film transistor display plate is provided with a substrate, a gate line on the substrate, a common electrode consisting of a transparent dielectric containing nitrogen and positioned on the substrate, a gate line, a gate insulating film on the common electrode, a semiconductor layer on the gate insulating film, a data line having a source electrode, a drain electrode opposed to the source electrode and positioned on the semiconductor layer and a pixel electrode connected to the drain electrode and superposed on the common electrode. Reduction of a metal component in the substance of IZO, ITO or a-ITO and deposition of Sn or Zn by an H<SB>2</SB>gas and an SiH<SB>4</SB>gas used when the nitride film is vapor-deposited on the common electrode are prevented by forming the common electrode by using IZON, ITON or a-ITON, or a double layer of ITO/ITON, IZO/IZON, or a-ITO/a-ITON. COPYRIGHT: (C)2006,JPO&NCIPI |
