| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a photoelectric converter with sufficient yield even if film thickness of a semiconductor layer is very thin to be not more than 50μm in the photoelectric converter, and to provide the photoelectric converter. <P>SOLUTION: The photoelectric converter is provided with the semiconductor layer, a surface electrode formed on the main face of the semiconductor layer, and a back electrode formed on a face confronted with the main face of the semiconductor layer. In the back electrode, a face on a side which is brought into contact with the semiconductor layer is larger than a contact face in the semiconductor layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
