| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing the deterioration of the characteristic or reliability of a capacitor. <P>SOLUTION: The semiconductor device comprises a semiconductor substrate 100; and a capacitor arranged above the semiconductor substrate which contains lower electrodes 116, 117, 118, 119 and 120 upper electrodes 122 and 123, and a dielectric film 121 arranged between the lower electrodes and the upper electrodes. The lower electrodes comprises a first electric conduction film 117 containing iridium; a second electric conductive film 119 arranged between a dielectric film and the first electric conductive film, and formed by a precious metal film; a third electric conductive film 120 formed by a metal oxide film arranged between a dielectric film and the second electric conduction film, and has perovskite structure; and a nonproliferation film 118 arranged between the first electric conductive film and the second electric conductive film, including at least either a metal film or a metal oxide film, and performing the prevention of proliferation of the iridium contained in the first electric conductive film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
