| 发明名称 |
METHOD OF FORMING ELECTRODE FOR COMPOUND SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming an electrode for a compound semiconductor device. <P>SOLUTION: The method includes steps of forming a first electrode layer on a p-type compound semiconductor layer, and performing plasma treatment on the first electrode layer in an oxygen-containing atmosphere. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006135293(A) |
申请公布日期 |
2006.05.25 |
| 申请号 |
JP20050209278 |
申请日期 |
2005.07.19 |
| 申请人 |
SAMSUNG ELECTRO MECH CO LTD;KWANGJU INST OF SCIENCE & TECHNOL |
发明人 |
KWAK JOON-SEOP;SEONG TAE-YEON;SONG JUNE-O |
| 分类号 |
H01L33/32;H01L21/28;H01L33/42;H01S5/042;H01S5/323 |
主分类号 |
H01L33/32 |
| 代理机构 |
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