| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing process of a resist polymer which exhibits high sensitivity and resolution, when used in a resist composition for DUV excimer laser lithography, electron ray lithography or the like and an excellent storage stability, when formulated in a resist composition, a resist composition containing the resist polymer obtained by the process and a method of patterning using the resist composition. <P>SOLUTION: The manufacturing process relates to the manufacture of a resist polymer containing constitutional unit (A1) expressed by formula (1) and having a partial charge of at least one hydrogen atom of the methyl group of group A of ≥0.150. The manufacturing process of the resist polymer comprises adding the polymer solution obtained by solution polymerization to at least one kind of organic medium selected from hydrocarbons, halogenated hydrocarbons, nitro compounds, nitriles, ethers, ketones, esters and carbonates and precipitating or re-precipitating the polymer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
