| 摘要 |
PROBLEM TO BE SOLVED: To prevent a gate electrode from being etched excessively at the time of etching a source region. SOLUTION: A semiconductor device is provided with a base region formed on a semiconductor substrate, a source region formed on the base region, and the gate electrode buried in a trench formed on the semiconductor substrate. The device is also provided with an interlayer insulating film formed on the whole surface of the semiconductor substrate, a first contact hole formed in the interlayer insulating film to expose the gate electrode, and a second contact hole formed in the interlayer insulating film and source region to expose the base region. In addition, the device is also provided with a second conductive film formed on the trench in which the first contact hole is formed. COPYRIGHT: (C)2006,JPO&NCIPI
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