| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a high-k material is used for a gate insulating film, and the occurrence of an impurity state in a band gap is suppressed. SOLUTION: The composition n of nitrogen that is introduced into the gate insulating film is determined. The transition metal X that constitutes the gate insulating film and its composition m are determined. The composition of oxygen that is introduced into the gate insulating film is controlled to satisfy (X)m(Y)1-m(N)n(O)q(m, n) as a function of the composition n of nitrogen and the composition m of the transition metal, and the gate insulating film comprising a metal oxide including nitrogen is formed on the semiconductor substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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