发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS CHARGE INJECTION METHOD
摘要 PROBLEM TO BE SOLVED: To uniform the injection of charges positionally and quantitatively by wiring and deleting data, and to improve data rewriting characteristic and holding characteristic. SOLUTION: An extension 4E is formed as a part of a drain 4. When the condition of data writing or data deleting is changed by injecting holes in a lamination insulating film 2, the hole is accumulated on its surface. In addition, a control electrode 6D is provided at a position where it is subject to capacity coupling with the extension 4E. The control electrode 6D is electrically insulated from a gate electrode 3 for generating an electric field in the vertical direction, and it can be independently applied by voltage, thus controlling the injection position within the lamination insulating film 2 of the hole by generating an electric field in the horizontal direction. Furthermore, the accumulation of holes in the extension part 4E can be promoted by the control electrode 6D, increasing injection efficiency of the hole. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006135048(A) 申请公布日期 2006.05.25
申请号 JP20040321723 申请日期 2004.11.05
申请人 SONY CORP 发明人 MORI HIDEKI
分类号 H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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