| 摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacturing method for a semiconductor device capable of inhibiting a collision between a gate electrode and a foreign matter. SOLUTION: In the manufacturing method for the semiconductor device, wafers formed on a surface are arranged inside the periphery of a disk in the semiconductor device with the gate electrode, and ions are implanted to the surfaces of the wafers while rotating the disk. In the manufacturing method for the semiconductor device, photo resists as dummies in heights corresponding at a collision angle to the gate electrode of the foreign matter are formed on isolation oxide films in the wafers, the peripheral sections of the wafers or dicing sections. COPYRIGHT: (C)2006,JPO&NCIPI
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