发明名称 |
Die bonded device and method for transistor packages |
摘要 |
The specification describes a technique for die bonding that is tailored to air cavity plastic packages for high power devices. The die bonding method is simple and effective, and eliminates the step of placement of solder preforms in the die bonding operation. According to the invention the die that are to be attached are pre-coated with AuSn solder. A multifunctional bonding layer is applied between the silicon die and the AuSn bonding layer. The multifunctional bonding layer comprises a multi-layer structure including Ti/Pt/Au. The chip support member comprises copper or a copper alloy. The chip support member may also be pre-coated with a bonding layer. The pre-coated die is soldered to the chip support member.
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申请公布号 |
US2006108672(A1) |
申请公布日期 |
2006.05.25 |
申请号 |
US20040996677 |
申请日期 |
2004.11.24 |
申请人 |
BRENNAN JOHN M;FREUND JOSEPH M;OSENBACH JOHN W;SAFAR HUGO F;SHANAMAN RICHARD III |
发明人 |
BRENNAN JOHN M.;FREUND JOSEPH M.;OSENBACH JOHN W.;SAFAR HUGO F.;SHANAMAN RICHARD III |
分类号 |
H01L23/495;H01L23/02;H01L23/24 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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