发明名称 |
Large grained polycrystalline silicon and method of making same |
摘要 |
A silicon structure includes a selective nucleating single phase epitaxial (SNSPE) template polysilicon layer containing crystallization catalyst residue, and a hot wire chemical vapor deposited (HWCVD) epitaxial polysilicon layer epitaxially grown on said template layer. The silicon structure may satisfy at least one of the following: 1) a thickness of the SNSPE template layer is less that about 60 nm; 2) a thickness of the HPCVD layer is greater than about 60 nm. The silicon structure may be used in a polysilicon solar cell or other solid state devices. A method of making a polysilicon layer includes providing a first layer comprising an amorphous silicon or a polysilicon layer containing a crystallization catalyst or in contact with a crystallization catalyst, and annealing the first layer in a silicon containing atmosphere to at least partially crystallize the first layer.
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申请公布号 |
US2006108688(A1) |
申请公布日期 |
2006.05.25 |
申请号 |
US20050274197 |
申请日期 |
2005.11.16 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
RICHARDSON CHRISTINE E.;ATWATER HARRY A. |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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