| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistive memory device having a probe array, and to provide a manufacturing method of the same. <P>SOLUTION: A resistive memory device has a memory 10, including a first substrate 101, a second substrate 300, and a bottom electrode layer 100 and a ferroelectric layer 200 formed on the first substrate 101; a probe 20 fixed on the second substrate 300 and having a chip so as to be opposed to the ferroelectric layer 200, and also having a resistive probe 400 for recording and regenerating data to the ferroelectric layer 200; and a coupling layer 500 grasping the resistive probe 400 and fixing it on the ferroelectric layer 200. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
