| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film forming method of a thin insulating film having preferred characteristics with a low flatband voltage and a low interface state by employing an ALD method having a first step for depositing silicon atoms and a second step for nitriding the silicon atoms. <P>SOLUTION: Temperature and pressure in the first and second steps are set at same values, a film forming temperature is made at a low temperature of 510°C or less, a pressure is made at 70 Pa or less, and an RF power is made at 0.1 kw or more, thereby obtaining the insulating film of the preferred characteristics with the low flatband voltage and interface state. A semiconductor apparatus with these insulating film can be obtained. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
