| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent hydrogen deterioration of the dielectric film constituting a capacitor caused by scratch, crack or the like. <P>SOLUTION: The semiconductor apparatus is provided with a first interlayer dielectric (107); an insulating hydrogen barrier film (108) formed on the first interlayer dielectric (107); a second interlayer dielectric (109) formed on the insulating hydrogen barrier film (108); contact plugs (111, 112) for penetrating the lamination film consisting of the first interlayer insulating film (107), the insulating hydrogen barrier film (108), and the second interlayer dielectric (109); and a capacitor (116) linked to the contact plugs (111, 112) formed on the second interlayer dielectric (109). Further, contact plugs (111, 112) consist of the electric conduction layer (111) and the conductive hydrogen barrier film (112) which are laminated sequentially from the bottom, and the upper surface of the electric conductive layer (111) is located below the upper surface of the insulating hydrogen barrier film (108). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
