| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for processing a semiconductor wafer capable of forming an insulating film or an oxide film such as a thin gate oxide film whose quality is improved. SOLUTION: In order to form an oxide film in a process chamber 204, the quality of the film is improved by irradiating a wafer 210 with the energy of light such as ultraviolet light from a light source 216, in addition to a heat source 214 to heat the wafer 210. COPYRIGHT: (C)2006,JPO&NCIPI
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