| 摘要 |
PROBLEM TO BE SOLVED: To reduce contact resistance without disadvantageous result such as drop of withstand voltage characteristics and increase of leak current at a gate electrode. SOLUTION: The semiconductor apparatus means a nitride semiconductor hetero-junction type field effect transistor where an electron supply layer 2 including a first seed layer of Al<SB>z</SB>Ga<SB>1-z</SB>N (0≤z≤1) is formed on the upper side of a channel layer 1 including the layer of Al<SB>x</SB>In<SB>y</SB>Ca<SB>1-x-y</SB>N (0≤x<1, 0≤y<1), with the channel layer 1 being hetero-jointed to the electron supply layer 2. A gate electrode 4, a source electrode 3, and a drain electrode 5 are arranged on the upper side of the electron supply layer 2. The electron supply layer 2 is n-type, impurity concentration of which is 1E18 cm<SP>-3</SP>or less at the upper side of the electrode 4. The lower sides of the source electrode 3 and drain electrode 5 are n-type where impurity concentration is 1E18 cm<SP>-3</SP>or higher. COPYRIGHT: (C)2006,JPO&NCIPI
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