发明名称 SEMICONDUCTOR PHOTODETECTOR
摘要 PROBLEM TO BE SOLVED: To prevent deterioration of photocurrent and optical response from occurring. SOLUTION: A semiconductor photodetector is provided with a substrate and a photodetecting element. The substrate is provided with an electric circuit. At least a first metal layer and a second metal layer are formed on the surface. The first metal layer and the second metal layer are electrically connected to a corresponding electrical signal input/output node of the electric circuit of the substrate. The photodetection element is a semiconductor photodetecting element, and the bottom end is connected to the substrate. The photodetecting element receives an incident light by transmitting an upper end. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006135010(A) 申请公布日期 2006.05.25
申请号 JP20040320633 申请日期 2004.11.04
申请人 SANEN KODEN KOFUN YUGENKOSHI 发明人 HAN SHAKUMEI;KAN HONIN
分类号 H01L31/10 主分类号 H01L31/10
代理机构 代理人
主权项
地址