| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulating film formation method capable of forming a certainly reliable insulating film in the inside and also in the opening of a penetration hole as well as capable of forming a uniform insulating film, even in the case of an inner side surface of a very minute penetration hole established in a conductive board or a semiconductive board. SOLUTION: The insulating film formation method for forming an insulating film in the inner side surface of a penetration hole established in a conductive board or a semiconductive board comprises a process for forming a first insulating film in the opening of the penetration hole, a process for forming a second insulating film in the inner surface of the penetration hole, and a process for hardening the second insulating film. Here, the first insulating film is formed by a physical deposition method or a chemical deposition method. The second insulating film is an insulating film formed by electrodeposition coating. COPYRIGHT: (C)2006,JPO&NCIPI
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