| 摘要 |
A light-emitting gallium nitride-based III-V group compound semiconductor device with enhanced brightness includes a substrate, a first-type conductive semiconductor layer, a light-emitting layer, a second-type conductive semiconductor layer, a transparent conductive layer, and two electrodes. During the manufacturing process of chips, a single or a pair of diamond scribing tool inclined in a certain angle is/are used, in combination with following breaking procedures, to make four sides of the chips of light emitting diode are trapezoid or parallelogram in the side view. Therefore, the external quantum efficiency of the light-emitting device is increased.
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