| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having shallow source and drain layers of high density. SOLUTION: The semiconductor device comprises a substrate which has a surface region of silicon, a gate insulating film formed on the surface region, a gate electrode formed on the gate insulating film, side wall insulating films provided on both sides of the gate electrode, and burying formation type source and drain layers formed by depositing a silicon film containing impurities in grooves formed on a substrate surface at parts extending from below to outside the side wall insulating films. The impurity density of silicon films at bottoms of the grooves are 1×10<SP>19</SP>to 1×10<SP>22</SP>cm<SP>-3</SP>, the impurity density of the silicon films along the depths of the grooves is constant, and the burying formation type source and drain layers are formed outside the side wall insulating films and thicker than the 1st burying formation type source and drain layers, are include 1st burying formation type source and drain layers formed below the side wall insulating films and 2nd burying formation type source and drain layer. COPYRIGHT: (C)2006,JPO&NCIPI
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