发明名称 METHOD AND DEVICE FOR PLASMA DEPOSITION, AND STORAGE MEDIUM USED FOR PLASMA DEPOSITING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a fluorine adding carbon film having superior characteristics in leakage characteristics and thermal stability by decomposing raw material gas to obtain deposition speices containing much C<SB>4</SB>F<SB>6</SB>and C<SB>4</SB>F<SB>5</SB>, in depositing the fluorine adding carbon film with plasma. SOLUTION: The plasma is generated by introducing microwaves to a radial line slot antenna onto a substrate loaded in gastight treating atmosphere. The deposition species containing a large amount of C<SB>4</SB>F<SB>6</SB>ion or radical is obtained, thereby depositing the fluorine adding carbon film, if for example, the raw material gas consisting of cyclic C<SB>5</SB>F<SB>8</SB>gas is activated, based on microwave energy under the conditions that the pressure of the treating atmosphere is 7.32 Pa or higher and 8.65 Pa or lower, microwave electric power is 2,000 W or higher and 2,300 W or lower, the distance between a substrate surface and a raw material supply inlet is 70 mm or larger and 105 mm or smaller, and the distance between the substrate and a first gas supply section is 100 mm or larger and 140 mm or smaller. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006135303(A) 申请公布日期 2006.05.25
申请号 JP20050276202 申请日期 2005.09.22
申请人 TOKYO ELECTRON LTD 发明人 KOBAYASHI YASUO;OTA TOMOHIRO;KO SHOJUN;SAWADA IKUO
分类号 H01L21/314;C23C16/26;C23C16/511;H01L21/768;H01L23/522 主分类号 H01L21/314
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