| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser capable of radiating laser with a narrower radiation angle. SOLUTION: The surface-emitting semiconductor laser comprises a substrate 110, a first mirror 142 provided on the upper part of the substrate 110, an active layer 144 provided on the upper part of the first mirror 142, a second mirror provided on the upper part of the active layer 144, an electrode 122 provided on the upper part of the second mirror 146, and an exit surface 126 not covered with the electrode 122 in the second mirror 146. The electrode 122 has a film thickness D satisfying the following formula (1). (4i+1)λ/8n≤D≤(4i+3)λ/8n ...(1). In the formula (1), (i) is an integer,λis an emitting wavelength, and (n) is the refractive index of a material covering the exit surface. COPYRIGHT: (C)2006,JPO&NCIPI
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