| 摘要 |
A semiconductor optical wave guide device ( 1 ) comprising a semiconductor layer ( 3 ) having an upper surface ( 5 ), and a lower surface ( 7 ) which is defined by a lower confinement layer( 9 ), the semiconduct or layer having formed therein: (a) a wave guide ( 13 ); (b) at least one recess ( 19 ) adjacent to the waveguide ( 13 )and extending from the upper surface ( 5 )of the semiconductor layer ( 3 ); (c) at least one doped region ( 21, 23 ), at least part of which is situated between a said recess ( 19 ) and the lower confinement layer ( 9 ); and (d) at least one trench ( 25 ) adjacent to a said doped region ( 21, 23 ) and recess ( 19 ) and situated on an opposite side thereof to the waveguide, wherein the (or each) trench ( 25 ) extends from the upper surface of the semiconductor layer ( 3 ).
|
