| 摘要 |
An analog circuit for processing analog signals in an integrated circuit comprising a number of metal oxide semiconductor transistor devices. The circuit includes a first transistor device having a thin oxide thickness, and a second transistor device having a thicker oxide thickness. A voltage pulse protection is arranged to maintain the operating voltage of the thin oxide transistor in the presence of a rapidly rising voltage waveform (e.g. ESD), or at least to mitigate its effect on the thin oxide transistor device. Preferably a cascode based op amp structure is implemented.
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